TSD882 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Low Vce(sat) NPN Transistor

TO-126
TSD882
Low Vce(sat) NPN Transistor
Pin assignment:
TO-126
1. Emitter
2. Collector
3. Base
BV_CEO = 50V
Ic = 3A
V_{CE (SAT)}, = 0.25V(typ.) @Ic / Ib = 2A / 0.2A
Features
Ordering Information
Low V_{CE (SAT).}
Excellent DC current gain characteristics
Structure
Part No.
TSD882CK
Packing
Bulk Pack
Epitaxial planar type.
Complementary to TSB772
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Package
TO-126
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
TO-126
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
50V
50V
5
3
7 (note 1)
1.0
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Characteristics
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
I_C = 50uA, I_E = 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C = 1mA, I_B = 0
I_E = 50uA, I_C = 0
V_CB = 40V, I_E = 0
V_EB = 4V, I_C = 0
I_C / I_B = 2.0A / 0.2A
V_CE = 2V, I_C = 1A
V_CE = 5V, I_C = 100mA,
f = 100MHz
Output Capacitance
V_CB = 10V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Symbol Min Typ Max Unit
BV_CBO
50
BV_CEO
50
BV_EBO
6
I_CBO
--
I_EBO
--
V_CE(SAT)
--
h_FE
160
f_T
--
Cob
--
--
--
--
--
0.25
--
90
45
--
V
--
V
--
V
1
uA
1
uA
0.5
V
500
-- MHz
--
pF
TSD882
1-1
2003/12 rev. B