TSD30H100CW Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Trench Schottky Rectifier

TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
2
1
3
TO-263AB (D²PAK)
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: TO-263AB (D²PAK)
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" menas green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
TSD30H
100CW
TSD30H
120CW
TSD30H
150CW
TSD30H
200CW
Maximum repetitive peak reverse voltage
V_RRM
100
120
150
200
Maximum average
forward rectified current
per device
per diode
I_F(AV)
30
15
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
I_FSM
200
Voltage rate of change (Rated V_R)
dV/dt
Instantaneous forward
voltage per diode (Note1)
I_F = 15A
T_J = 25°C
T_J = 125°C
V_F
Instantaneous reverse current per
diode at rated reverse voltage
T_J = 25°C
T_J = 125°C
I_R
Typical thermal resistance per diode
R_θJC
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
10000
TYP MAX TYP MAX TYP MAX TYP MAX
0.69 0.78 0.75 0.84 0.81 0.90 0.84 0.92
0.61 0.68 0.64 0.73 0.68 0.77 0.70 0.79
-
250
-
250
-
150
-
150
10
35
10
35
3
20
3
20
2.8
- 55 to +150
- 55 to +150
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1411019
Version: B15