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| TSD2444_1 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor | |||
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TSD2444
Low Vcesat NPN Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
40V
25V
800mA
40mV @ IC / IB = 50 / 2.5mA
Features
Ordering Information
â Low VCE(SAT)
â Excellent DC Current Gain Characteristics
Structure
Part No.
TSD2444CX RF
Package
SOT-23
Packing
3Kpcs / 7â Reel
â Epitaxial Planar Type
â Complementary to TSB1590CX
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VCBO
VCEO
VEBO
IC
Ptot
TJ
TSTG
Limit
40
25
6
800
225
+150
- 55 to +150
Unit
V
V
V
mA
mW
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage IC = 100uA, IE = 0
Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0
BVCBO
40
BVCEO
25
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
IE = 100uA, IC = 0
VCB = 30V, IE = 0
VEB = 6V, IC = 0
BVEBO
6
ICBO
--
IEBO
--
Collector-Emitter Saturation Voltage
IC = 50mA, IB = 2.5mA
IC = 400mA, IB = 20mA
*VCE(SAT) 1
*VCE(SAT) 2
--
Base-Emitter on Voltage
IC = 800mA, IB = 80mA
VCE = 1V, IC = 10mA
*VCE(SAT) 3
--
VBE(ON)
--
DC Current Transfer Ratio
VCE = 1V, IC = 100mA
VCE = 1V, IC = 600mA
hFE 1
180
hFE 2
40
Transition Frequency
VCE = 5V, IC=-100mA
Output Capacitance
VCB = 10V, f=1MHz
* Pulse Test: Pulse width â¤380us, Duty cycle ⤠2%
fT
--
Cob
--
Typ
--
--
--
--
--
0.04
0.15
0.25
--
--
--
150
15
Max
--
--
--
0.5
0.5
0.06
0.3
0.6
1.0
560
--
--
--
Unit
V
V
V
uA
uA
V
V
MHz
pF
1/4
Version: A08
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