TSD2444 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Low Vce(sat) NPN Transistor

TSD2444
Low Vce(sat) NPN Transistor
Pin assignment:
1. Base
2. Emitter
3. Collector
BV_CEO = 20V
Ic = 1A
V_{CE (SAT)}, = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA
Features
— Low V_{CE (SAT).}
— Excellent DC current gain characteristics
Structure
— Epitaxial planar type.
— Complementary to TSB1590CX
Ordering Information
Part No.
TSD2444CX
Packing
Tape & Reel
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Package
SOT-23
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
DC
Pulse
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
40V
20V
5
1
1.5 (note 1)
0.225
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Characteristics
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
I_C = 10uA, I_E = 0
Collector-Emitter Breakdown Voltage
I_C = 1mA, I_B = 0
Emitter-Base Breakdown Voltage
I_E = 10uA, I_C = 0
Collector Cutoff Current
V_CB = 20V, I_E = 0
Emitter Cutoff Current
V_EB = 4V, I_C = 0
Collector-Emitter Saturation Voltage
I_C / I_B = 500mA / 50mA
DC Current Transfer Ratio
V_CE = 2V, I_C = 0.1A
Transition Frequency
V_CE = 5V, I_C = 50mA,
f = 100MHz
Output Capacitance
V_CB = 10V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Symbol Min Typ Max Unit
BV_CBO
40
--
--
V
BV_CEO
20
--
--
V
BV_EBO
5
--
--
V
I_CBO
--
--
0.5 uA
I_EBO
--
--
0.5 uA
V_CE(SAT)
--
0.2
0.4
V
h_FE
82
--
390
f_T
--
150
-- MHz
Cob
--
15
--
pF
Classification Of h_FE
Rank
P
Range
82 - 180
Q
120 - 270
R
180 - 390
TSD2444
1-3
2003/12 rev. A