TSD2150A_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor

TSD2150A
Low Vcesat NPN Transistor
SOT-89
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
80V
50V
3A
0.5V @ I_C / I_B = 2A / 200mA
Features
Ordering Information
● Low V_CE(SAT) 0.1 @ I_C / I_B = 1A / 50mA (Typ.)
● Complementary part with TSB1424A
Structure
Part No.
Package
TSD2150ACY RM SOT-89
Packing
1Kpcs / 7” Reel
● Epitaxial Planar Type
● NPN Silicon Transistor
Absolute Maximum Ratings (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
80
V
50
V
6
V
3
A
6 (note1)
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
P_D
T_J
T_STG
0.6
W
+150
o_C
- 55 to +150
o_C
Electrical Specifications (T_A=25^oC unless otherwise noted)
Parameter
Conditions
Collector-Base Breakdown Voltage ^IC ^{= 50uA, I}E ^{= 0}
Collector-Emitter Breakdown Voltage ^IC ^{= 1mA, I}B ^{= 0}
Emitter-Base Breakdown Voltage
I_E = 50uA, I_C = 0
Collector Cutoff Current
V_CB = 60V, I_E = 0
Emitter Cutoff Current
V_EB = 3V, I_C = 0
Collector-Emitter Saturation Voltage
I_C / I_B = 1A / 50mA
I_C / I_B = 2A / 200mA
Base-Emitter Saturation Voltage
I_C / I_B = 2A / 200mA
V_CE = 2V, I_C = 100mA
DC Current Transfer Ratio
V_CE = 2V, I_C = 500mA
V_CE = 2V, I_C = 1A
Transition Frequency
V_CE =5V, I_E=0.1A,
f=100MHz
Output Capacitance
V_CB = 10V, f=1MHz
Note: Pulse test: pulse width ≤380µs, Duty cycle≤2%
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(SAT)
V_CE(SAT)
V_BE(SAT)
h_FE 1
h_FE 2
h_FE 3
f_T
Cob
Min Typ Max Unit
80
--
--
V
50
--
--
V
6
--
--
V
--
--
0.1 µA
--
--
0.1 µA
--
0.1 0.25
V
--
0.25 0.5
--
--
2
V
180
--
--
200
--
400
150
--
--
--
90
-- MHz
--
45
--
pF
1/4
Version: C14