TSD1858 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor

TSD1858
Low Vcesat NPN Transistor
TO-251
(IPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
180V
160V
1.5A
0.3V @ I_C = 1A, I_B = 100mA
Features
Ordering Information
● Low V_CE(SAT) 0.15 @ I_C = 1A, I_B = 100mA (Typ.)
● High BV_CEO
Structure
Part No.
Package
Packing
TSD1858CH C5G
TO-251
75pcs / Tube
Note: “G” denote for Halogen Free Product
● Epitaxial Planar Type
● NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @ T_A=25 ^oC
Power Dissipation @ T_C=25 ^oC
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
P_D
P_D
Thermal Resistance - Junction to Case
RÓ¨_JC
Thermal Resistance - Junction to Ambient
RÓ¨_JA
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw≤380us, Duty≤2%
T_J
T_STG
Limit
180
160
5
1.5
3 (note1)
1
15
125
8.33
+150
- 55 to +150
Unit
V
V
V
A
W
W
o_C/W
o_C/W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage I_C = 1mA, I_E = 0
BV_CBO
180
--
--
V
Collector-Emitter Breakdown Voltage I_C = 10mA, I_B = 0
BV_CEO
160
--
--
V
Emitter-Base Breakdown Voltage
I_E = 50uA, I_C = 0
BV_EBO
5
--
--
V
Collector Cutoff Current
V_CB = 160V, I_E = 0
I_CBO
--
--
1
uA
Emitter Cutoff Current
V_EB = 4V, I_C = 0
I_EBO
--
--
1
uA
Collector-Emitter Saturation Voltage I_C= 1A, I_B = 100mA
V_CE(SAT)
--
0.15 0.3
V
Base-Emitter Saturation Voltage
V_CE = 5V, I_C = 5mA
V_BE(ON)
--
--
0.8
V
DC Current Transfer Ratio
V_CE = 5V, I_C = 200mA
V_CE = 5V, I_C = 500mA
h_FE 1
h_FE 2
180
--
390
30
--
--
Transition Frequency
V_CE =5V, I_E=150mA,
f=100MHz
f_T
--
200
--
MHz
Output Capacitance
V_CB = 10V, f=1MHz
Note: Pulse test: pulse width ≤380uS, Duty cycle≤2%
Cob
--
13
--
pF
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Version: E11