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| TSD1857 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor | |||
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TO-126
TSD1857
Low Vcesat NPN Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
180V
180V
1.5A
0.6V @ IC / IB = 1A / 100mA
Features
Ordering Information
â Low VCE(SAT) 0.6 @ IC / IB = 1A / 100mA (Typ.)
â High BVCEO
Structure
â Epitaxial Planar Type
â NPN Silicon Transistor
Part No.
TSD1857CT B0
TSD1857CT A3
TSD1857CK B0
Package
TO-92
TO-92
TO-126
Packing
1K / Bulk
2K / Ammo
500pcs / Bulk
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
VCBO
VCEO
VEBO
IC
Collector Power Dissipation
TO-92
TO-126
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Dutyâ¤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
TJ
TSTG
Limit
180
180
5
1.5
3 (note1)
0.75
1
+150
- 55 to +150
Unit
V
V
V
A
W
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage IC = 50uA, IE = 0
BVCBO
180
--
--
V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0
BVCEO
180
--
--
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = 50uA, IC = 0
VCB = 160V, IE = 0
BVEBO
5
--
--
V
ICBO
--
--
1
uA
Emitter Cutoff Current
VEB = 4V, IC = 0
IEBO
--
--
1
uA
Collector-Emitter Saturation Voltage IC / IB = 1A / 100mA
VCE(SAT)
--
--
0.6
V
Base-Emitter Saturation Voltage
VCE = 5V, IC = 5mA
VBE(ON)
0.45
--
0.8
V
DC Current Transfer Ratio
VCE = 5V, IC = 200mA
VCE = 5V, IC = 500mA
hFE 1
hFE 2
160
--
320
30
--
--
Transition Frequency
VCE =5V, IE=150A,
f=100MHz
fT
--
140
--
MHz
Output Capacitance
VCB = 10V, f=1MHz
Note: Pulse test: pulse width â¤380uS, Duty cycleâ¤2%
Cob
--
27
--
pF
1/5
Version: B11
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