TSD1664_07 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor

TSD1664
Low Vcesat NPN Transistor
SOT-89
SOT-223
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
32V
40V
1A
0.15V @ I_C / I_B = 500mA / 50mA
Features
Ordering Information
● Low V_CE(SAT) 0.15V @ I_C / I_B = 500mA / 50mA (Typ.)
● Complementary part with TSB1132
Structure
● Epitaxial Planar Type
● NPN Silicon Transistor
Part No.
TSD1664CY RM
TSD1664CW RP
Package
TO-92
TO-223
Packing
1Kpcs / 7” Reel
2.5Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
Emitter-Base Voltage
V_CEO
V_EBO
Collector Current
DC
Pulse
I_C
Collector Power Dissipation
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=20ms, Duty≤50%
T_STG
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
Limit
40
32
5
1
2 (note1)
0.5
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
I_C = 50uA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 50uA, I_C = 0
BV_CBO
40
BV_CEO
32
BV_EBO
5
Collector Cutoff Current
Emitter Cutoff Current
V_CB = 20V, I_E = 0
V_EB = 4V, I_C = 0
I_CBO
--
I_EBO
--
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C / I_B = 500mA / 50mA
V_CE = 3V, I_C = 100mA
V_CE =5V, I_C=-50mA,
f=100MHz
V_CE(SAT)
--
h_FE
82
f_T
50
Output Capacitance
V_CB = 10V, I_E = 0, f=1MHz
Cob
--
Typ
--
--
--
--
--
0.15
--
150
10
Max
--
--
--
0.5
0.5
0.4
390
--
20
Unit
V
V
V
uA
uA
V
MHz
pF
hFE values are classified as follows:
Rank
P
Q
hFE
82~180 120~270
R
180~390
1/5
Version: A07