TSD1664 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Low Frequency NPN Transistor

TSD1664
Low Frequency NPN Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV_CEO = 20V
Ic = 800mA
V_{CE (SAT)}, = 0.15V(typ.) @Ic / Ib = 400mA / 20mA
Features
— Low V_{CE (SAT).}
— Excellent DC current gain characteristics
Structure
— Epitaxial planar type.
— NPN silicon transistor
Ordering Information
Part No.
TSB1664CY
Packing
Tape & Reel
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Package
SOT-89
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
DC
Pulse
SOT-89
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 20mS, Duty <= 50%
2. When mounted on a 40 x 40 x 0.7mm ceramic board
Electrical Characteristics
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
40V
20V
5
0.8
1.5 (note 1)
0.5
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Symbol Min
Static
Collector-Base Voltage
I_C = 10uA, I_E = 0
BV_CBO
40
Collector-Emitter Breakdown Voltage I_C = 1mA, I_B = 0
BV_CEO
20
Emitter-Base Breakdown Voltage
I_E = 10uA, I_C = 0
BV_EBO
5
Collector Cutoff Current
V_CB = 20V, I_E = 0
I_CBO
Emitter Cutoff Current
V_EB = 4V, I_C = 0
I_EBO
Collector-Emitter Saturation Voltage I_C / I_B = 400mA / 20mA
V_CE(SAT)1
Collector-Emitter Saturation Voltage I_C / I_B = 800mA / 80mA
V_CE(SAT)2
DC Current Transfer Ratio
V_CE = 2V, I_C = 0.1A
h_FE
82
Transition Frequency
V_CE =5V, I_C=50mA, f=100MHz
f_T
Output Capacitance
V_CB = 10V, f=1MHz
Cob
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Typ
0.15
0.25
150
20
Max Unit
V
V
V
0.5 uA
0.5 uA
0.3
V
0.5
V
560
MHz
30
pF
Classification Of h_FE
Rank
P
Range
82 - 180
Q
120 - 270
R
180 - 390
S
270 - 560
TSB1664
1-3
2003/12 rev. A