TSC966 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – NPN Silicon Planar High Voltage Transistor

TSC966
NPN Silicon Planar High Voltage Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
SOT-223
Pin Definition: _{PRODUCT SUMMARY}
1. Base
2. Collector
3. Emitter
BV_CBO
BV_CEO
600V
400V
I_C
300mA
V_CE(SAT)
0.5V @ I_C / I_B = 50mA / 5mA
Features
● High BVceo, BVcbo
● High current gain
Structure
● Epitaxial Planar Type
Ordering Information
Part No.
Package
Packing
TSC966CT B0
TO-92
1Kpcs / Bulk
TSC966CT A3
TO-92
2Kpcs / Ammo
TSC966CW RPG SOT-223 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CES
V_CEO
V_EBO
I_C
Total Power Dissipation @ T_A=25^oC
TO-92
SOT-223
P_tot
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_STG
Limit
600
600
400
7
0.3
1
0.9
1
+150
- 55 to +150
Unit
V
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
I_C = 50uA
I_C = 100uA, V_BE= 0
I_C = 1mA
I_E = 50uA
V_CB = 600V
V_CE = 400V
V_EB = 7V
I_C = 50mA, I_B = 5mA
I_C = 50mA, I_B = 5mA
V_CE = 5V, I_C = 1mA
V_CE = 5V, I_C = 20mA
V_CE = 10V, I_E= 20mA
V_CB = 20V, f=1MHz
BV_CBO
BV_CES
BV_CEO
BV_EBO
I_CBO
I_CEO
I_EBO
V_CE(SAT)
V_BE(SAT)
h_FE 1
h_FE 2
f_T
Cob
Min Typ Max Unit
600
--
--
V
600
--
--
V
400
--
--
V
7
--
--
V
--
--
0.5
uA
--
--
1
uA
--
--
1.5
uA
--
--
0.5
V
--
--
1
V
100
--
--
90
--
300
50
--
-- MHz
--
--
7
pF
1/5
Version: D12