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TSC742 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor
TSC742
High Voltage NPN Transistor
TO-220
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCEO
BVCBO
IC
VCE(SAT)
420V
1050V
4A
0.5V @ IC=1A, IB=0.2A
Features
● High Voltage Capability
● High Switching Speed
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor
Ordering Information
Part No.
TSC742CZ C0
Package
TO-220
Packing
50pcs / Tube
Block Diagram
Absolute Maximum Rating (TA = 25oC, unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage @ VBE=0V
Emitter-Base Voltage
Collector Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Power Total Dissipation @ Tc=25ºC
Maximum Operating Junction Temperature
Storage Temperature Range
Note: Single Pulse. PW = 300uS, Duty ≤2%
VCBO
VCES
VEBO
IC
ICM
IB
IBM
PDTOT
TJ
TSTG
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RÓ¨JC
RÓ¨JA
Limit
1050
420
15
4
8
2
4
70
+150
-55 to +150
Limit
1.8
62.5
Unit
V
V
V
A
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/4
Version: B13