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TSC741_15 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – High Voltage Fast-Switching NPN Power Transistor
TSC741
Taiwan Semiconductor
High Voltage Fast-Switching NPN Power Transistor
FEATURES
● High Voltage Capability
● Fast Switching Speed
● Pb-free plating
● RoHS compliant
APPLICATION
● Electronic Ballast
● Switch mode power supply
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
BVCEO
450
V
BVCBO
1050
V
IC
2.5
A
VCE(SAT)
IC=0.7A, IB=0.14A
0.5
V
TO-220
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Collector-Base Voltage
VCBO
1050
Collector-Emitter Voltage @ VBE=0V
VCES
450
Emitter-Base Voltage
VEBO
15
Collector Current
IC
2.5
Collector Peak Current (tp <5ms)
ICM
4
Base Current
IB
1.5
Base Peak Current (tp <5ms)
IBM
3
Power Total Dissipation @ TA=25ºC
PDTOT
60
Maximum Operating Junction Temperature
TJ
+150
Storage Temperature Range
TSTG
-55 to +150
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
RÓ¨JC
RÓ¨JA
LIMIT
1.8
62.5
UNIT
V
V
V
A
A
A
A
W
oC
oC
UNIT
oC/W
oC/W
Document Number: DS_P0000178
1
Version: B15