TSC5988 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – NPN Silicon Planar Medium Power Transistor

TSC5988
NPN Silicon Planar Medium Power Transistor
TO-92
Pin Definition:
1. Emitter
2. Base
3. Collector
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
150V
60V
6A
0.55V @ I_C / I_B = 6A / 300mA
Features
● Excellent gain characteristics specified up to 10A
Structure
● Epitaxial Planar Type
Ordering Information
Part No.
TSC5988CT B0
TSC5988CT A3
Package
TO-92
TO-92
Packing
1Kpcs / Bulk
2Kpcs / Ammo
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
P_tot
T_J
T_STG
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Collector-Base Breakdown Voltage I_C =100uA, I_E =0
Collector-Emitter Breakdown Voltage I_C =10mA, I_B =0
Emitter-Base Breakdown Voltage
I_E =100uA, I_C =0
Collector Cutoff Current
Emitter Cutoff Current
V_CB =120V, I_E =0
V_CB =120V, T_A =100ºC
V_EB =6V, I_C =0
Collector-Emitter Saturation Voltage
I_C =100mA, I_B =5mA
I_C =1A, I_B =50mA
I_C =2A, I_B =100mA
I_C =5A, I_B =200mA
Base-Emitter Saturation Voltage
I_C =4A, I_B =200mA
Base-Emitter on Voltage
V_CE =1V, I_C =6A
V_CE =1V, I_C =10mA
DC Current Transfer Ratio
V_CE =1V, I_C =2A
V_CE =1V, I_C =5A
V_CE =1V, I_C =10A
Transition Frequency
Output Capacitance
V_CE =10V, I_C=100mA
V_CB =10V, f=1MHz
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(SAT) 1
V_CE(SAT) 2
V_CE(SAT) 3
V_CE(SAT) 4
V_BE(SAT)
V_BE(ON)
h_FE 1
h_FE 2
h_FE 3
h_FE 4
f_T
Cob
Limit
150
60
6
5
20
1.0
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Min Typ Max Unit
150
170
--
V
60
70
--
V
6
8
--
V
--
--
50
nA
--
--
1
uA
--
--
10
nA
--
20
50
--
80
120
mV
--
150
220
--
260
--
--
920 1050 mV
--
1.05
1.2
V
100
--
--
120
200
300
75
140
--
--
70
--
--
130
--
MHz
--
72
--
pF
1/5
Version: C08