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| TSC5904 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor | |||
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TSC5904
Low Vcesat NPN Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
80V
60V
3A
0.60V @ IC / IB = 3 / 300mA
Features
Ordering Information
â High Collector-Emitter BVCEO=60V
â High Collector Current IC =3A
Structure
Part No.
TSC5904CX RF
Package
SOT-23
Packing
3Kpcs / 7â Reel
â Epitaxial Planar Type
â NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VCBO
VCEO
VEBO
IC
Ptot
TJ
TSTG
Limit
80
60
5
3
500
+150
- 55 to +150
Unit
V
V
V
A
mW
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Collector-Base Breakdown Voltage IC = 10uA, IE = 0
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
IE = 10uA, IC = 0
VCB = 40V, IE = 0
VEB = 4V, IC = 0
Collector-Emitter Saturation Voltage
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
IC = 1A, IB = 100mA
VCE = 2V, IC = 1A
DC Current Transfer Ratio
VCE = 2V, IC = 50mA
VCE = 2V, IC = 1A
VCE = 2V, IC = 3A
VCE = 2V, IC = 500mA
Transition Frequency
Output Capacitance
VCE = 5V, IC=-100mA
VCB = 10V, f=1MHz
Switching Times
VCC= 10V, IC= 500mA,
IB1=-IB2=50mA
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT) 1
VCE(SAT) 2
VBE(SAT)
VBE(ON)
hFE 1
hFE 2
hFE 3
hFE 4
fT
Cob
Ton
Toff
Min
80
60
5
--
--
--
--
--
70
100
80
40
140
--
--
--
Typ
--
--
--
--
--
0.12
0.43
0.9
0.8
--
--
--
--
--
45
800
Max
--
--
--
0.1
0.1
0.3
0.6
1.25
1.0
--
300
--
--
--
30
--
--
Unit
V
V
V
uA
uA
V
V
V
MHz
pF
nS
nS
1/4
Version: A08
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