TSC5804D_15 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – High Voltage Fast-Switching NPN Power Transistor

TSC5804D
Taiwan Semiconductor
High Voltage Fast-Switching NPN Power Transistor
FEATURES
● High Voltage Capability
● Fast Switching Speed
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
APPLICATION
● Electronic Ballast
● Switch mode power supply
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
BV_CEO
450
V
BV_CBO
1050
V
I_C
5
A
V_CE(SAT)
I_C=1A, I_B=0.2A
0.5
V
TO-251
(IPAK)
TO-252
(DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Collector-Base Voltage
Collector-Emitter Voltage @ V_BE=0V
V_CBO
V_CES
1050
450
Emitter-Base Voltage
V_EBO
15
Collector Current
I_C
5
Collector Peak Current (tp <5ms)
I_CM
8
Base Current
I_B
2
Base Peak Current (tp <5ms)
I_BM
4
Power Total Dissipation @ T_A=25ºC
P_DTOT
45
Maximum Operating Junction Temperature
T_J
+150
Storage Temperature Range
T_STG
-55 to +150
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R_Ó¨JC
R_Ó¨JA
LIMIT
2.78
100
UNIT
V
V
V
A
A
A
A
W
o_C
o_C
UNIT
o_C/W
o_C/W
Document Number: DS_P0000181
1
Version: B15