TSC5804D Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – High Voltage Fast-Switching NPN Power Transistor

TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
TSC5804D
High Voltage Fast-Switching
NPN Power Transistor
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
450V
1050V
4A
0.5V @ I_C=1A, I_B=0.2A
Features
● High Voltage Capability
● High Switching Speed
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TSC5804DCH C5G TO-251
75pcs / Tube
TSC5804DCP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
Absolute Maximum Rating (T_A = 25^oC, unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage @ V_BE=0V
Emitter-Base Voltage
Collector Current
Collector Peak Current (tp <5ms)
Base Current
Base Peak Current (tp <5ms)
Power Total Dissipation @ Tc=25ºC
Maximum Operating Junction Temperature
Storage Temperature Range
Note: Single Pulse. P_W = 300uS, Duty ≤2%
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
I_BM
P_DTOT
T_J
T_STG
Thermal Performance
Parameter
Thermal Resistance – Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
1050
450
15
4
8
2
4
45
+150
-55 to +150
Limit
2.78
100
Unit
V
V
V
A
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/5
Version: A13