TSC5327 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

Engineer Specification
TSC5327
High Voltage NPN Transistor
TO-220
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
800V
1200V
4A
3V @ I_C / I_B = 2.5A / 0.5A
Features
● High Voltage
● High Speed Switching
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor
Ordering Information
Part No.
TSC5327CZ C0
Package
TO-220
Packing
50pcs / Tube
Block Diagram
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
Collector Current
DC
Pulse
V_EBO
I_C
Base Current
DC
I_B
Pulse
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single Pulse. P_W = 300uS, Duty ≤2%
P_D
T_J
T_STG
Limit
1200V
800V
7
4
10
2
5
50
+150
- 55 to +150
Unit
V
V
V
A
A
W
o_C
o_C
1/4
Version: Engineer Specification A