TSC5304ED_12 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor with Diode

TSC5304ED
High Voltage NPN Transistor with Diode
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
400V
700V
4A
0.25V (Typ.) @ I_C=0.5A, I_B=0.1A
Features
● Build-in Free-wheeling Diode Makes Efficient Anti-
saturation Operation
● Low Base Drive Requirement
● Suitable for Half Bridge Light Ballast Application
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor
● Integrated Anti-parallel Collector-Emitter Diode
Ordering Information
Part No.
Package
Packing
TSC5304EDCP ROG TO-252 2.5Kpcs / 13” Reel
TSC5304EDCH C5G
TO-251
75pcs / Tube
Note: “G” denote for Halogen Free Product
Block Diagram
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage @ V_BE=0V
V_CES
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Collector Peak Current (tp <5ms)
I_CM
Base Current
I_B
Base Peak Current (tp <5ms)
I_BM
Power Total Dissipation @ Tc=25ºC
P_DTOT
Maximum Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
Limit
700
700
400
9
4
8
2
4
35
+150
-55 to +150
Unit
V
V
V
V
A
A
A
A
W
o_C
o_C
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Version: E11