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TSC5304ED Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor with Diode | |||
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TSC5304ED
High Voltage NPN Transistor with Diode
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCEO
BVCBO
IC
VCE(SAT)
400V
700V
4A
0.25V (Typ.) @ IC=0.5A, IB=0.1A
Features
â Build-in Free-wheeling Diode Makes Efficient Anti-
saturation Operation
â No Need to Interest an hfe Value Because of Low
Variable Storage-time Spread Even Though Comer
Spirit Product.
â Low Base Drive Requirement
â Suitable for Half Bridge Light Ballast Application
Structure
â Silicon Triple Diffused Type
â NPN Silicon Transistor
â Integrated Anti-parallel Collector-Emitter Diode
Ordering Information
Part No.
TSC5304EDCP RO
TSC5304EDCH C5
Package
TO-252
TO-251
Packing
2.5Kpcs / 13â Reel
75pcs / Tube
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage @ VBE=0V
VCES
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Collector Peak Current (tp <5ms)
ICM
Base Current
IB
Base Peak Current (tp <5ms)
IBM
Power Total Dissipation @ Tc=25ºC
PDTOT
Maximum Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Limit
700
700
400
9
4
8
2
4
35
+150
-55 to +150
Unit
V
V
V
V
A
A
A
A
W
oC
oC
1/6
Version: C10
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