TSC5303D_14 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor with Diode

TSC5303D
High Voltage NPN Transistor with Diode
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
400V
700V
3A
0.17V @ I_C=1A, I_B=0.25A
Features
● Build-in Free-wheeling Diode Makes Efficient Anti-
saturation Operation
● No Need to Interest an h_FE Value Because of Low
Variable Storage-time Spread Even Though Comer
Spirit Product.
● Low Base Drive Requirement
● Suitable for Half Bridge Light Ballast Application
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor
● Integrated Anti-parallel Collector-Emitter Diode
Ordering Information
Part No.
Package
Packing
TSC5303DCP ROG TO-252 2.5kpcs / 13” Reel
TSC5303DCH C5G TO-251
75pcs / Tube
Note: “G” denotes Halogen Free Products
Block Diagram
Absolute Maximum Ratings (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage @ V_BE=0V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V_CBO
V_CES
V_CEO
V_EBO
I_C
Collector Peak Current (tp <5ms)
I_CM
Base Current
I_B
Base Peak Current (tp <5ms)
Power Total Dissipation @ T_C=25ºC
I_BM
P_DTOT
Maximum Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
Limit
700
700
400
9
3
6
1.5
3
30
+150
-55 to +150
Unit
V
V
V
V
A
A
A
A
W
o_C
o_C
1/6
Version: C14