TSC5302D_10 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor with Diode

TSC5302D
High Voltage NPN Transistor with Diode
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
400V
700V
2A
1.1V @ I_C / I_B = 1A / 0.25A
Features
● Build-in Free-wheeling Diode Makes Efficient Anti-saturation
Operation
● No Need to Interest an hfe Value Because of Low Variable
Storage-time Spread Even Though Comer Spirit Product.
● Low Base Drive Requirement
● Suitable for Half Bridge Light Ballast Application
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor with Diode
Ordering Information
Part No.
Package
Packing
TSC5302DCP RO
TO-252 2.5Kpcs / 13” Reel
TSC5302DCP ROG
TO-252 2.5Kpcs / 13” Reel
TSC5302DCH C5
TO-251
75pcs / Tube
TSC5302DCH C5G
TO-251
75pcs / Tube
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V_CBO
V_CEO
V_EBO
I_C
Collector Peak Current (tp <5ms)
I_CM
Base Current
I_B
Base Peak Current (tp <5ms)
I_BM
Total Dissipation @ Tc ≤ 25^oC
TO-251
TO-252
P_tot
Maximum Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
Symbol
RÓ¨_JC
RÓ¨_JA
Block Diagram
Limit
700
400
10
2
4
1
2
1.5
25
+150
-65 to +150
Limit
6.25
100
Unit
V
V
V
A
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
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Version: F10