TSC5302D Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor with Diode

Preliminary
TSC5302D
High Voltage NPN Transistor with Diode
Pin assignment:
1. Base
2. Collector
3. Emitter
BV_CEO = 400V
BV_CBO = 800V
Ic = 2A
V_{CE (SAT)}, = 1.0V @ Ic / Ib = 1A / 0.2A
Features
Ordering Information
Built-in free-wheeling diode makes efficient anti
saturation operation.
Part No.
TSC5302DCH
Packing
Tube
No need to interest an hfe value because of low variable TSC5302DCP
T&R
storage-time spread even though comer spirit product.
Low base drive requirement.
Block Diagram
Suitable for half bridge light ballast applications.
Package
TO-251
TO-252
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
Collector Power Dissipation (Tc=25 ^oC)
Pulse
TO-251
TO-252
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
T_J
T_STG
RΘjc
RΘja
Limit
800V
400V
10
2
4
1
2
75
1.5
+150
- 65 to +150
6.25
100
Unit
V
V
V
A
A
W
o_C
o_C
o_C/W
o_C/W
TS5302D Preliminary
1-1
2004/09 rev. A