TSC5301D_08 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor with Diode

TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
TSC5301D
High Voltage NPN Transistor with Diode
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
400V
700V
1A
1.1V @ I_C / I_B = 1A / 0.25A
Features
● Build-in Free-wheeling Diode Makes Efficient Anti-saturation
Operation
● No Need to Interest an hfe Value Because of Low Variable
Storage-time Spread Even Though Comer Spirit Product.
● Low Base Drive Requirement
● Suitable for Half Bridge Light Ballast Application
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor with Diode
Ordering Information
Part No.
Package
TSC5301DCT B0
TO-92
TSC5301DCT B0G
TO-92
TSC5301DCT A3
TO-92
TSC5301DCT A3G
TO-92
Note: “G” denote for Halogen free
Packing
1Kpcs / Bulk
1Kpcs / Bulk
2Kpcs / Ammo
2Kpcs / Ammo
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
Collector Current
V_EBO
I_C
Collector Peak Current (tp <5ms)
I_CM
Base Current
I_B
Base Peak Current (tp <5ms)
I_BM
Total Dissipation @ Tc ≤ 25^oC
P_tot
Maximum Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
Block Diagram
Limit
700V
400V
10
1
2
0.5
1
0.6
+150
-65 to +150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
1/5
Version: E07