TSC4505_11 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TSC4505
High Voltage NPN Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
400V
400V
300mA
0.1V @ I_C / I_B = 10mA / 1mA
Features
● Low V_CE(SAT) 0.15V @ I_C / I_B = 10mA / 10mA (Typ.)
● Complementary part with TSA1759
Structure
● Epitaxial Planar Type
● NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TSC4505CX RF
SOT-23
3Kpcs / 7” Reel
TSC4505CX RFG
SOT-23
3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
SOT-23
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw=20ms, Duty≤50%
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Electrical Specifications (T_A = 25^oC unless otherwise noted)
Parameter
Conditions
Collector-Base Breakdown Voltage I_C = 50uA, I_E = 0
Collector-Emitter Breakdown Voltage I_C = 1mA, I_B = 0
Emitter-Base Breakdown Voltage
I_E = 50uA, I_C = 0
Collector Cutoff Current
Collector-Emitter Reverse Current
V_CB = 400V, I_E = 0
V_CE = 300V, R_EB = 4kΩ
Emitter Cutoff Current
V_EB = 6V, I_C = 0
Collector-Emitter Saturation Voltage I_C / I_B = 10mA / 1mA
Base-Emitter Saturation Voltage
I_C / I_B = 10mA / 1mA
DC Current Transfer Ratio
V_CE = 10V, I_C = 10mA
Transition Frequency
V_CE =10V, I_C=-10mA,
f=10MHz
Output Capacitance
V_CB = 10V, I_E = 0, f=1MHz
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_CER
I_EBO
V_CE(SAT)
V_BE(SAT)
h_FE
f_T
Cob
Limit
400
400
6
300
0.225
+150
- 55 to +150
Unit
V
V
V
mA
W
o_C
o_C
Min Typ Max Unit
400
--
--
V
400
--
--
V
6
--
--
V
--
--
10
uA
--
--
20
nA
--
--
10
uA
--
0.1 0.5
V
--
--
1.5
V
100
--
270
--
20
-- MHz
--
7
--
pF
1/4
Version: B11