TSC4505 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – High Voltage NPN Transistor

TSC4505
High Voltage NPN Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
TO-92
Pin Definition:
1. Emitter
2. Base
3. Collector
PRODUCT SUMMARY
BV_CEO
BV_CBO
I_C
V_CE(SAT)
400V
400V
300mA
0.1V @ I_C / I_B = 10mA / 1mA
Features
Ordering Information
● Low V_CE(SAT) 0.15V @ I_C / I_B = 10mA / 10mA (Typ.)
● Complementary part with TSA1759
Structure
● Epitaxial Planar Type
● NPN Silicon Transistor
Part No.
TSC4505CX RF
TSC4505CT B0
TSC4505CT A3
Package
SOT-23
TO-92
TO-92
Packing
3Kpcs / 7” Reel
1Kpcs / Bulk
2Kpcs / Ammo
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
Collector Power Dissipation
I_C
SOT-23
TO-92
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=20ms, Duty≤50%
T_STG
Limit
400
400
6
300
0.225
0.6
+150
- 55 to +150
Unit
V
V
V
mA
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage I_C = 50uA, I_E = 0
BV_CBO
400
Collector-Emitter Breakdown Voltage I_C = 1mA, I_B = 0
Emitter-Base Breakdown Voltage
I_E = 50uA, I_C = 0
BV_CEO
BV_EBO
400
6
Collector Cutoff Current
Collector-Emitter Reverse Current
Emitter Cutoff Current
V_CB = 400V, I_E = 0
V_CE = 300V, R_EB = 4kЊ
V_EB = 6V, I_C = 0
I_CBO
--
I_CER
--
I_EBO
--
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C / I_B = 10mA / 1mA
I_C / I_B = 10mA / 1mA
V_CE(SAT)
--
V_BE(SAT)
--
DC Current Transfer Ratio
Transition Frequency
V_CE = 10V, I_C = 10mA
V_CE =10V, I_C=-10mA,
f=10MHz
h_FE
100
f_T
--
Output Capacitance
V_CB = 10V, I_E = 0, f=1MHz
Cob
--
Typ
--
--
--
--
--
--
0.1
--
--
20
7
Max
--
--
--
10
20
10
0.5
1.5
270
--
--
Unit
V
V
V
uA
nA
uA
V
V
MHz
pF
1/5
Version: A07