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TSC2411_1 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – General Purpose NPN Transistor
TSC2411
General Purpose NPN Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
PRODUCT SUMMARY
BVCEO
BVCBO
IC
VCE(SAT)
40V
75V
600mA
0.5V @ IC / IB = 380mA / 10mA
Features
Ordering Information
● Driver Stage of AF Amplifier
● General Purpose Switching Application
Structure
Part No.
TSC2411CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
● Epitaxial Planar Type
● Complementary to TSA1036CX
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=20ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Limit
75
40
6
600
225
+150
- 55 to +150
Unit
V
V
V
mA
mW
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Collector-Base Breakdown Voltage IC = 10uA, IE = 0
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 10uA, IC = 0
Collector Cutoff Current
Emitter Cutoff Current
VCB = 60V, IE = 0
VEB = 3V, IC = 0
Collector-Emitter Saturation Voltage IC / IB = 380mA / 10mA
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC / IB = 150mA / 15mA
IC / IB = 500mA / 50mA
Base-Emitter Saturation Voltage
IC / IB = 150mA / 15mA
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
IC / IB = 500mA / 50mA
VCE = 1V, IC = 150mA
Transition Frequency
VCE =5V, IC=-20mA,
f=100MHz
Output Capacitance
VCB = 5V, f=1MHz
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT) 1
VCE(SAT) 2
VCE(SAT) 3
VBE(SAT) 1
VBE(SAT) 2
hFE
fT
Cob
Min
75
40
6
--
--
--
--
--
0.75
--
82
300
--
Typ
--
--
--
--
--
0.2
0.2
0.45
--
--
--
--
6
Max
--
--
--
0.1
0.1
0.5
0.4
0.75
0.95
1.2
390
--
--
Unit
V
V
V
uA
uA
V
V
V
V
V
MHz
pF
1/4
Version: A09
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