TSC2059 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – General Purpose NPN Transistor

TSC2059
General Purpose NPN Transistor
Pin assignment:
1. Base
2. Emitter
3. Collector
BV_CEO = 40V
Ic = 50mA
V_{CE (SAT)}, = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
Features
High transition frequency
Very low capacitance
Small rbb’-Cc and high gain
Small NF.
Ordering Information
Part No.
TSC2059CX
Packing Package Marking
3kpcs / Reel SOT-23
3E
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Electrical Characteristics
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
18V
25V
3
50
225
+150
- 55 to +150
Unit
V
V
V
mA
mW
o_C
o_C
Parameter
Conditions
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C = 10uA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 10uA, I_C = 0
V_CB = 10V, I_E = 0
V_EB = 2V, I_C = 0
I_C / I_B = 20mA / 4mA
V_CE = 10V, I_C = 10mA
V_CE = 10V, I_C= 10mA,
f=200MHz
Output Capacitance
V_CB = 10V, f=1MHz
V_CB = 10V, I_C= 10mA,
f=31.8MHz
V_CE = 12V, I_C= 2mA,
f=200MHz, Rg=50ohm
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Symbol Min Typ Max Unit
BV_CBO
25
BV_CEO
18
BV_EBO
3
I_CBO
--
I_EBO
--
V_CE(SAT)1
--
h_FE
52
f_T
--
Cob
--
Rbb’-Cc --
--
--
--
--
--
--
--
1000
1.4
8
--
V
--
V
--
V
0.5
uA
0.5
uA
0.5
V
270
-- MHz
2.0
pF
15
pF
NF
--
5.5
--
dB
Classification Of h_FE
Rank
K
Range
52 - 120
P
82 - 180
Q
120 - 270
TSC2059
1-1
2004/06 rev. A