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TSC128D Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – High Voltage Fast-Switching NPN Power Transistor
TSC128D
High Voltage Fast-Switching NPN Power Transistor
TO-220
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCEO
BVCBO
IC
VCE(SAT)
400V
700V
4A
1.5V @ IC / IB = 2.5A / 0.5A
Features
● High Voltage
● High Speed Switching
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor
● Integrated Antiparallel Collector-Emitter Diode
Ordering Information
Part No.
TSC128DCZ C0
Package
TO-220
Packing
50pcs / Tube
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
Collector Peak Current (tp <5ms)
ICM
Base Current
IB
Base Peak Current (tp <5ms)
IBM
Total Dissipation
Ptot
Maximum Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
Symbol
RÓ¨JC
RÓ¨JA
Limit
700V
400V
9
4
8
2
4
70
+150
-65 to +150
Limit
1.78
62.5
Unit
V
V
V
A
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/5
Version: A07