TSB772_13 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor

TSB772
Low Vcesat PNP Transistor
TO-126
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
-50V
-30V
-3A
-0.5V @ I_C / I_B = -2A / -200mA
Features
Ordering Information
● Low V_CE(SAT) -0.3 @ I_C / I_B = 2A / 200mA (Typ.)
● Complementary part with TSD882
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Part No.
Package
Packing
TSB772CK B0G
TO-126
250pcs / Bulk
TSB772CK C0G
TO-126
50pcs / Tube
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
-50
V
-30
V
-5
V
-3
A
-7 (note)
Collector Power Dissipation
T_A = 25^oC
T_C = 25^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw≤350us, Duty≤2%
P_D
T_J
T_STG
1
W
10
+150
o_C
- 55 to +150
o_C
Electrical Specifications (T_A=25^oC unless otherwise noted)
Parameter
Conditions
Symbol
Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C = -50uA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -50uA, I_C = 0
V_CB = -30V, I_E = 0
V_EB = 3V, I_C = 0
I_C / I_B = -2A / -200mA
I_C / I_B = -2A / -200mA
V_CE = -2V, I_C = -1A
V_CE =-5V, I_C=-100mA,
f=100MHz
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
*V_CE(SAT)
*V_BE(SAT)
*h_FE
f_T
-50
--
--
V
-30
--
--
V
-5
--
--
V
--
--
-1
uA
--
--
-1
uA
--
-0.3 -0.5
V
--
-1
-2
V
100
--
500
--
80
-- MHz
Output Capacitance
V_CB = -10V, f=1MHz
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
Cob
--
55
--
pF
1/4
Version: F13