TSB772_07 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor

TSB772
Low Vcesat PNP Transistor
TO-126
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
-50V
-50V
-3A
-0.5V @ I_C / I_B = -2A / -200mA
Features
Ordering Information
● Low V_CE(SAT) -0.3 @ I_C / I_B = 2A / 200mA (Typ.)
● Complementary part with TSD882
Structure
Part No.
TSD772CK B0
Package
TO-126
Packing
1Kpcs / Bulk
● Epitaxial Planar Type
● PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
DC
Pulse
Ta = 25^oC
Tc = 25^oC
V_CEO
V_EBO
I_C
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw≤350us, Duty≤2%
T_STG
Limit
-50
-50
-5
-3
-7 (note)
1
10
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C = -50uA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -50uA, I_C = 0
V_CB = -30V, I_E = 0
V_EB = 3V, I_C = 0
I_C / I_B = -2A / -200mA
I_C / I_B = -2A / -200mA
V_CE = -2V, I_C = -1A
V_CE =-5V, I_C=-100mA,
f=100MHz
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
*V_CE(SAT)
*V_BE(SAT)
*h_FE
f_T
-50
-50
-5
--
--
--
--
100
--
Output Capacitance
V_CB = -10V, f=1MHz
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
Cob
--
Typ
--
--
--
--
--
-0.3
-1
--
80
55
Max
--
--
--
-1
-1
-0.5
-2
500
--
--
Unit
V
V
V
uA
uA
V
V
MHz
pF
1/4
Version: A07