TSB772S_10 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor

TSB772S
Low Vcesat PNP Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
-50V
-30V
-3A
-0.5V @ I_C / I_B = -2A / -200mA
Features
● Low V_CE(SAT) -0.25 @ I_C / I_B = 2A / 200mA (Typ.)
● Complementary part with TSD882S
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Ordering Information
Part No.
Package
TSB772SCT B0
TO-92
TSB772SCT B0G
TO-92
TSB772SCT A3
TO-92
TSB772SCT A3G
TO-92
Note: “G” denotes for Halogen Free
Packing
1Kpcs / Bulk
1Kpcs / Bulk
2Kpcs / Ammo
2Kpcs / Ammo
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
Collector Power Dissipation
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw≤350us, Duty≤2%
T_J
T_STG
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C = -50uA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -50uA, I_C = 0
V_CB = -30V, I_E = 0
V_EB = 3V, I_C = 0
I_C / I_B = -2A / -200mA
I_C / I_B = -2A / -200mA
V_CE = -2V, I_C = -1A
V_CE =-5V, I_C=-100mA,
f=100MHz
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
*V_CE(SAT)
*V_BE(SAT)
*h_FE
f_T
Output Capacitance
V_CB = -10V, f=1MHz
Cob
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
Limit
-50
-30
-5
-3
-7 (note)
0.625
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Min Typ Max Unit
-50
--
--
V
-30
--
--
V
-5
--
--
V
--
--
-1
uA
--
--
-1
uA
--
-0.3 -0.5
V
--
-1
-2
V
100
--
500
--
80
--
MHz
--
55
--
pF
1/4
Version: F07