TSB772S Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Low Vce(sat) PNP Transistor

TSB772S
Low Vce(sat) PNP Transistor
Pin assignment:
TO-92
1. Emitter
2. Collector
3. Base
SOT-89
1. Base
2. Collector
3. Emitter
BV_CEO = - 50V
Ic = - 3A
V_{CE (SAT)}, = - 0.3V(typ.) @Ic / Ib = - 2A / - 20mA
Features
— Low V_{CE (SAT).}
— Excellent DC current gain characteristics
Structure
— Epitaxial planar type.
— PNP silicon transistor
Ordering Information
Part No.
TSB772SCT
TSB772SCY
Packing
Bulk Pack
Tape & Reel
Package
TO-92
SOT-89
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
TO-92
SOT-89
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 350US, Duty <= 2%
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
- 50V
- 50V
-5
-3
- 7 (note 1)
0.75
0.50
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Characteristics
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
I_C = - 50uA, I_E = 0
I_C = - 1mA, I_B = 0
I_E = - 50uA, I_C = 0
V_CB = - 40V, I_E = 0
V_EB = - 4V, I_C = 0
I_C / I_B = - 2.0A / - 0.2A
V_CE = - 2V, I_C = - 1A
Transition Frequency
V_CE = - 5V, I_C = - 100mA,
f = 100MHz
Output Capacitance
V_CB = - 10V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Symbol Min
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(SAT)
h_FE
f_T
- 50
- 50
-5
--
--
--
160
--
Cob
Typ
--
--
--
--
--
- 0.3
--
80
55
Max Unit
--
--
--
-1
-1
- 0.5
350
--
V
V
V
uA
uA
V
MHz
--
pF
TSB772S
1-3
2003/12 rev. C