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| TSB1590_1 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor | |||
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TSB1590
Low Vcesat PNP Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
-40V
-25V
-1A
-0.18V @ IC / IB = -500mA / -50mA
Features
Ordering Information
â Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA
â Complementary part with TSD2444
Structure
Part No.
TSB1590CX RF
Package
SOT-23
Packing
3Kpcs / 7â Reel
â Epitaxial Planar Type
â PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
Collector Current
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
IC
PD
RθJA
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pwâ¤350us, Dutyâ¤2%
TJ
TSTG
Limit
-40
-25
-6
-1
225
556
+150
- 55 to +150
Unit
V
V
V
A
mW
oC/W
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage IC = -50uA, IE = 0
Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0
BVCBO
-40
BVCEO
-25
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = -50uA, IC = 0
VCB = -35V, IE = 0
BVEBO
-6
ICBO
--
Emitter Cutoff Current
VEB = -6V, IC = 0
IEBO
--
Collector-Emitter Saturation Voltage IC / IB = -500mA / -50mA
*VCE(SAT)
--
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
IC / IB = -500mA / -50mA
VCE = -3V, IC = -100mA
VCE = -3V, IC = -800mA
VCE =-5V, IC=-50mA,
f=100MHz
*VBE(SAT)
--
*hFE 1
120
*hFE 2
80
fT
--
Output Capacitance
VCB = -10V, f=1MHz
* Pulse Test: Pulse Width â¤380uS, Duty Cycleâ¤2%
Cob
--
Typ
--
--
--
--
--
-0.18
-0.9
--
--
150
15
Max
--
--
--
-100
-100
-0.4
-1.3
560
--
--
--
Unit
V
V
V
nA
nA
V
V
MHz
pF
1/1
Version: A09
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