TSB1424_11 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor

TSB1424
Low Vcesat PNP Transistor
SOT-89
SOT-23
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
-20V
-20V
-3A
-0.2V @ I_C / I_B = -2A / -100mA
Features
Ordering Information
● Low V_CE(SAT) -0.2 @ I_C / I_B = -2A / -100mA (Typ.)
● Complementary part with TSD2150
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Part No.
Package
Packing
TSB1424CY RM
SOT-89 1Kpcs / 7” Reel
TSB1424CY RMG SOT-89 1Kpcs / 7” Reel
TSB1424CX RF
SOT-23 3Kpcs / 7” Reel
TSB1424CX RFG
SOT-23
3Kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
P_D
T_J
T_STG
Limit
SOT-89
SOT-23
-20
-20
-6
-3
-5 (note1)
0.6
0.3
2 (note 2) 1 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage I_C = -50uA, I_E = 0
BV_CBO
-20
--
--
V
Collector-Emitter Breakdown Voltage I_C = -10mA, I_B = 0
BV_CEO
-20
--
--
V
Emitter-Base Breakdown Voltage
I_E = -50uA, I_C = 0
BV_EBO
-6
--
--
V
Collector Cutoff Current
V_CB = -20V, I_E = 0
I_CBO
--
--
-0.1 uA
Emitter Cutoff Current
V_EB = -5V, I_C = 0
I_EBO
--
--
-0.1 uA
Collector-Emitter Saturation Voltage I_C / I_B = -2A / -100mA
V_CE(SAT)
--
-0.2 -0.5
V
DC Current Transfer Ratio
V_CE = -2V, I_C = 100mA
h_FE
180
--
390
Transition Frequency
V_CE =-2V, I_E=0.5A,
f=100MHz
f_T
--
200
-- MHz
Output Capacitance
V_CB = -10V, I_E = 0,
f=1MHz
Cob
--
28
--
pF
1/5
Version: E11