TSB1424_07 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor

TSB1424
Low Vcesat PNP Transistor
SOT-89
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
-20V
-20V
-3A
-0.2V @ I_C / I_B = -2A / -100mA
Features
Ordering Information
● Low V_CE(SAT) -0.2 @ I_C / I_B = -2A / -100mA (Typ.)
● Complementary part with TSD2150
Structure
Part No.
TSB1424CY RM
Package
SOT-89
Packing
1Kpcs / 7” Reel
● Epitaxial Planar Type
● PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
DC
Pulse
I_C
Collector Power Dissipation
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
T_STG
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
Limit
-20
-20
-6
-3
-5 (note1)
0.6
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage I_C = -50uA, I_E = 0
BV_CBO
-20
Collector-Emitter Breakdown Voltage I_C = -10mA, I_B = 0
BV_CEO
-20
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I_E = -50uA, I_C = 0
V_CB = -20V, I_E = 0
V_EB = -5V, I_C = 0
I_C / I_B = -2A / -100mA
BV_EBO
-6
I_CBO
--
I_EBO
--
V_CE(SAT)
--
DC Current Transfer Ratio
Transition Frequency
V_CE = -2V, I_C = 100mA
V_CE =-2V, I_E=0.5A,
f=100MHz
h_FE
120
f_T
--
Output Capacitance
V_CB = -10V, I_E = 0, f=1MHz
Cob
--
Typ
--
--
--
--
--
-0.2
--
200
28
Max
--
--
--
-0.1
-0.1
-0.5
390
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
hFE values are classified as follows:
Rank
Q
R
hFE
120~270 180~390
1/4
Version: A07