TSB1412_11 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor

TSB1412
Low Vcesat PNP Transistor
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
-40V
-30V
-5A
-0.5V @ I_C / I_B = -4A / -100mA
Features
Ordering Information
● Low V_CE(SAT) -0.36 @ I_C / I_B = -4A / -100mA (Typ.)
● Complementary part with TSD2118
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Part No.
Package
Packing
TSB1412CP RO
TO-252 2.5Kpcs / 13” Reel
TSB1412CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” is denote Halogen Free Product.
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
Collector Power Dissipation
Ta=25ºC
Tc=25ºC
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw=10ms
T_J
T_STG
Limit
-40
-30
-6
-5
-10 (note)
1
10
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (T_A=25^oC unless otherwise noted)
Parameter
Conditions
Collector-Base Breakdown Voltage I_C = -50uA, I_E = 0
Collector-Emitter Breakdown Voltage I_C = -1mA, I_B = 0
Emitter-Base Breakdown Voltage
I_E = -50uA, I_C = 0
Collector Cutoff Current
V_CB = -25V, I_E = 0
Emitter Cutoff Current
V_EB = -5V, I_C = 0
Collector-Emitter Saturation Voltage I_C / I_B = -4A / -100mA
DC Current Transfer Ratio
V_CE = -2V, I_C = -500mA
Transition Frequency
V_CE =-6V, I_C=-50mA,
f=30MHz
Output Capacitance
V_CB = -20V, f=1MHz
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
*V_CE(SAT)
*h_FE
f_T
Cob
Min
-40
-30
-6
--
--
--
180
--
--
Typ
--
--
--
--
--
-0.36
--
120
60
Max
--
--
--
-0.5
-0.5
-0.5
390
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
1/4
Version: B11