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| TSB1412 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor | |||
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TSB1412
Low Vcesat PNP Transistor
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
-40V
-30V
-5A
-0.5V @ IC / IB = -4A / -100mA
Features
Ordering Information
â Low VCE(SAT) -0.36 @ IC / IB = -4A / -100mA (Typ.)
â Complementary part with TSD2118
Structure
Part No.
TSB1412CP RO
Package
Packing
TO-252 2.5Kpcs / 13â Reel
â Epitaxial Planar Type
â PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
Collector Current
DC
Pulse
IC
Collector Power Dissipation
Ta=25ºC
Tc=25ºC
PD
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw=10ms
TSTG
Limit
-40
-30
-6
-5
-10 (note)
1
10
+150
- 55 to +150
Unit
V
V
V
A
W
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage IC = -50uA, IE = 0
BVCBO
-40
--
--
V
Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0
BVCEO
-30
--
--
V
Emitter-Base Breakdown Voltage
IE = -50uA, IC = 0
BVEBO
-6
--
--
V
Collector Cutoff Current
VCB = -25V, IE = 0
ICBO
--
--
-0.5
uA
Emitter Cutoff Current
VEB = -5V, IC = 0
IEBO
--
--
-0.5
uA
Collector-Emitter Saturation Voltage IC / IB = -4A / -100mA
*VCE(SAT)
--
-0.36 -0.5
V
DC Current Transfer Ratio
VCE = -2V, IC = -500mA
*hFE
180
--
390
Transition Frequency
VCE =-6V, IC=-50mA,
f=30MHz
fT
--
120
--
MHz
Output Capacitance
VCB = -20V, f=1MHz
* Pulse Test: Pulse Width â¤380uS, Duty Cycleâ¤2%
Cob
--
60
--
pF
1/4
Version: A07
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