TSB1386_1 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Frequency PNP Transistor

TSB1386
Low Frequency PNP Transistor


SOT-89
Pin Definition:
PRODUCT SUMMARY
1. Base
2. Collector
BV_CBO
-30V
3. Emitter
BV_CEO
-20V
I_C
-5A

V_CE(SAT)
-0.35V @ I_C / I_B = -4A / -100mA
Features
Ordering Information
● Low V_CE(SAT) -0.35 @ I_C / I_B = -4A / -100mA (Typ.)
● Excellent DC current gain characteristics
Structure
Part No.
TSB1386CY RM
Package
SOT-89
Packing
1Kpcs / 7” Reel
● Epitaxial Planar Type
● PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
DC
Pulse
I_C
Collector Power Dissipation
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
T_J
T_STG
Limit
-30
-20
-6
-5
-10 (note1)
0.5
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage I_C = -50uA, I_E = 0
Collector-Emitter Breakdown Voltage I_C = -1mA, I_B = 0
BV_CBO
-30
--
--
V
BV_CEO
-20
--
--
V
Emitter-Base Breakdown Voltage
I_E = -50uA, I_C = 0
BV_EBO
-6
--
--
V
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V_CB = -20V, I_E = 0
V_EB = -5V, I_C = 0
I_C / I_B = -4A / -100mA
I_C / I_B = -3A / -60mA
I_CBO
I_EBO
V_CE(SAT)
V_BE(SAT)
--
--
-0.5
uA
--
--
-0.5
uA
--
-0.35 -0.6
V
--
-1.2
-1.5
V
DC Current Transfer Ratio
Transition Frequency
V_CE = -2V, I_C = -500mA
V_CE =-6V, I_E=-50mA,
f=30MHz
h_FE
180
--
390
f_T
--
120
--
MHz
Output Capacitance
V_CB = -5V, I_E = 0, f=1MHz
Cob
Note: Pulse test; Pw≤350us, Duty≤2%
--
60
--
pF
1/4
Version: A09