TSB1386 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Frequency PNP Transistor

TSB1386
Low Frequency PNP Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV_CEO = - 20V
Ic = - 5A
V_{CE (SAT)}, = - 0.35V(typ.) @Ic / Ib = - 4A / - 0.1A
Features
— Low V_{CE (SAT).}
— Excellent DC current gain characteristics
Structure
— Epitaxial planar type.
— PNP silicon transistor
Ordering Information
Part No.
TSB1386CP
TSB1386CY
Packing
Tape & Reel
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
TO-252
SOT-89
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS, Duty <= 50%
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
- 30V
- 20V
-6
-5
- 10
1
0.5
+150
- 55 to +150
Package
TO-252
SOT-89
Unit
V
V
V
A
W
o_C
o_C
Electrical Characteristics
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Symbol Min
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C = - 50uA
I_C = - 1mA
I_E = - 50uA
V_CB = - 20V
V_EB = - 5V
I_C / I_B = - 4A / - 0.1A
V_CE = - 2V, I_C = - 0.5A
V_CE = - 6V, I_E = - 50mA,
f = 30MHz
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(SAT)
h_FE
f_T
- 30
- 20
-6
82
Output Capacitance
V_CB = - 5V, I_E =0A,f=1MHz
Cob
Note : pulse test: pulse width <=350uS, duty cycle <=2%
Typ
120
60
Max Unit
- 0.5
-0.5
- 1.0
390
V
V
V
uA
uA
V
MHz
pF
Classification Of h_FE
Rank
P
Range
82 - 180
Q
120 - 270
R
180 - 390
TSB1386
1-4
2003/12 rev. A