TSB1184A_1 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor

TSB1184A
Low Vcesat PNP Transistor
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
-50V
-50V
-3A
-0.3V @ I_C / I_B = -2A / -100mA
Features
Ordering Information
● Low V_CE(SAT) -0.3V @ I_C / I_B = -2A / -100mA (Typ.)
● Excellent DC current gain characteristics
Structure
Part No.
Package
Packing
TSB1184ACP RO TO-252 2.5Kpcs / 13” Reel
● Epitaxial Planar Type
● PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
DC
Pulse
I_C
Collector Power Dissipation
Ta=25ºC
Tc=25ºC
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw=10ms
T_STG
Limit
-50
-50
-6
-3
-7 (note)
1
5
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage I_C = -50uA, I_E = 0
BV_CBO
-50
Collector-Emitter Breakdown Voltage I_C = -1mA, I_B = 0
Emitter-Base Breakdown Voltage
I_E = -50uA, I_C = 0
BV_CEO
-50
BV_EBO
-6
Collector Cutoff Current
Emitter Cutoff Current
V_CB = -40V, I_E = 0
V_EB = -4V, I_C = 0
I_CBO
--
I_EBO
--
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C / I_B = -2A / -200mA
V_CE = -2V, I_C = -100mA
V_CE =-5V, I_C=-100mA,
f=30MHz
*V_CE(SAT)
*h_FE
f_T
--
120
--
Output Capacitance
V_CB = -10V, f=1MHz
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
Cob
--
Typ
--
--
--
--
--
-0.3
--
80
55
Max
--
--
--
-1
-1
-0.5
560
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
1/4
Version: A08