TSB1184 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Low Vce(sat) PNP Transistor

TSB1184
Low Vce(sat) PNP Transistor
Pin Assignment:
1. Base
2. Collector
3. Emitter
BV_CEO = - 50V
Ic = - 3A
V_{CE (SAT)}, = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A
Features
Ordering Information
Low V_{CE (SAT).}
Excellent DC current gain characteristics
Structure
Part No.
TSB1184CP
Packing
Tape & Reel
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Package
TO-252
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
TO-252
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
Electrical Characteristics
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
- 50V
- 50V
-6
-3
- 7 (note 1)
1.0
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
I_C = - 50uA, I_E = 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C = - 1mA, I_B = 0
I_E = - 50uA, I_C = 0
V_CB = - 40V, I_E = 0
V_EB = - 4V, I_C = 0
I_C / I_B = - 2.0A / - 0.2A
V_CE = - 2V, I_C = - 1A
V_CE = - 5V, I_C = - 100mA,
f = 100MHz
Output Capacitance
V_CB = - 10V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Symbol Min
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(SAT)
h_FE
f_T
- 50
- 50
-6
--
--
--
120
--
Cob
Typ
--
--
--
--
--
- 0.3
--
80
55
Max Unit
--
--
--
-1
-1
- 0.5
560
--
V
V
V
uA
uA
V
MHz
--
pF
Classification Of h_FE
Rank
Q
Range
120 - 270
R
180 - 390
S
270 - 560
TSB1184
1-1
2003/12 rev. B