TSB1132_1 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor

TSB1132
Low Vcesat PNP Transistor
SOT-89
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
-40V
-32V
-1A
-0.15V @ I_C / I_B = -0.5A / -50mA
Features
Ordering Information
● Low V_CE(SAT) -0.15 @ I_C / I_B = --.5A / -50mA (Typ.)
● Excellent DC current gain characteristics
Structure
Part No.
TSB1132CY RM
Package
SOT-89
Packing
1Kpcs / 7” Reel
● Epitaxial Planar Type
● PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
DC
Pulse
I_C
Collector Power Dissipation
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 40 x 0.7mm ceramic board.
T_J
T_STG
Limit
-40
-32
-5
-1
-2.5 (note1)
0.6
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage I_C = -50uA, I_E = 0
BV_CBO
-40
Collector-Emitter Breakdown Voltage I_C = -1mA, I_B = 0
BV_CEO
-32
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I_E = -50uA, I_C = 0
V_CB = -20V, I_E = 0
V_EB = -4V, I_C = 0
I_C / I_B = -0.5A / -50mA
BV_EBO
-5
I_CBO
--
I_EBO
--
V_CE(SAT)
--
DC Current Transfer Ratio
Transition Frequency
V_CE = -3V, I_C = 100mA
V_CE =-5V, I_C=-50mA,
f=100MHz
h_FE
82
f_T
--
Output Capacitance
V_CB = -10V, f=1MHz
Cob
--
Typ
--
--
--
--
--
-0.15
--
150
20
Max
--
--
--
-0.5
-0.5
-0.5
390
--
30
Unit
V
V
V
uA
uA
V
MHz
pF
hFE values are classified as follows:
Rank
Q
R
hFE
120~270 180~390
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Version: A08