TSB1132 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Low Frequency PNP Transistor

TSB1132
Low Frequency PNP Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV_CEO = - 32V
Ic = - 1A
V_{CE (SAT)}, =- 0.15V(typ.) @Ic / Ib =- 0.5A /- 50mA
Features
Ordering Information
Low V_{CE (SAT).}
Excellent DC current gain characteristics
Structure
Part No.
TSB1132CY
Packing
Tape & Reel
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Package
SOT-89
Marking
BK
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
DC
Pulse
SOT-89
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS, Duty <= 50%
2. When mounted on a 40 x 40 x 0.7mm ceramic board
Electrical Characteristics
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
- 40V
- 32V
-5
-1
- 2.5 (note 1)
0.6
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C = - 50uA, I_E = 0
BV_CBO
- 40
V
I_C = - 1mA, I_B = 0
BV_CEO
- 32
V
I_E = - 50uA, I_C = 0
BV_EBO
-5
V
V_CB = - 20V, I_E = 0
I_CBO
- 0.5 uA
V_EB = - 4V, I_C = 0
I_EBO
-0.5 uA
I_C / I_B = - 500mA / - 50mA V_CE(SAT)
- 0.15 - 0.5 V
V_CE = - 3V, I_C = - 0.1A
h_FE
82
390
V_CE = - 5V, I_C = - 50mA,
f_T
150
MHz
f = 100MHz
Output Capacitance
V_CB = - 10V, f=1MHz
Cob
Note : pulse test: pulse width <=380uS, duty cycle <=2%
20
30
pF
Classification Of h_FE
Rank
P
Range
82 - 180
Q
120 - 270
R
180 - 390
TSB1132
1-1
2003/12 rev. B