 English |
|
|
|
|
|
|
|
| TSA5888 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat PNP Transistor High allowable power dissipation. | |||
| |||
|
TSA5888
Low Vcesat PNP Transistor
SOT-89
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
-50V
-40V
-5.5A
-175mV @ IC / IB = -3.5A / -175mA
Features
Ordering Information
â Adoption of FBET and MBIT processes.
â High current capacitance.
â Low collector-to-emitter saturation voltage.
â High-speed switching.
â Ultrasmall package facilitales miniaturization in
end
products.
â High allowable power dissipation.
Part No.
Package
Packing
TSA5888CY RMG
SOT-89
1Kpcs / 7â Reel
Note: âGâ denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
VCBO
VCEO
VEBO
IC
Collector Power Dissipation
PC
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
TSTG
Note: For a device surface mounted on 15mm x 15mm x 16mm FR4 PCB
Limit
-50
-40
-7.5
-5.5
-15
0.9
+150
- 55 to +150
Unit
V
V
V
A
W
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage IC = -100uA, IE = 0
BVCBO
-50
--
--
V
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0
BVCEO
-40
--
--
V
Emitter-Base Breakdown Voltage
IE = -100uA, IC = 0
BVEBO
-7.5
--
--
V
Collector Cutoff Current
VCB = -40V, IE = 0
ICBO
--
--
-20 uA
Emitter Cutoff Current
VEB = -6V, IC = 0
IEBO
--
--
-20 uA
Collector-Emitter Saturation Voltage
IC / IB = -2A / -40mA
IC / IB = -3.5A / -175mA
VCE(SAT) 1
--
-175 -400
mV
VCE(SAT) 2
--
-175 -390
Base-Emitter Saturation Voltage
IC / IB = -2A / -40mA
VBE(SAT)
--
-0.9 -1.2 mV
DC Current Transfer Ratio
VCE = -2V, IC = -10mA
hFE 1
200
--
560
Transition Frequency
VCE =-10V, IE=50mA,
fT
--
152
-- MHz
Output Capacitance
VCB = -10V, f=1MHz
Cob
--
53
--
pF
Turn-ON Time
Turn-OFF Time
VCC = -10V,IC=-1A
-IB1=IB2=-100mA
Ton
--
35
--
ns
Toff
--
385
--
ns
1/5
Version: B12
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese