TSA1765 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – High Voltage PNP Epitaxial Planar Transistor

TSA1765
High Voltage PNP Epitaxial Planar Transistor
SOT-223
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
-600V
-560V
-150mA
-0.5V @ I_C / I_B = -50mA / -10mA
Features
● Low Saturation Voltages
● High Breakdown Voltage
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Ordering Information
Part No.
TSA1765CW RP
Package
Packing
SOT-223 2.5Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Collector Current(Pulse)
I_CP
Base Current
I_B
Total Power Dissipation @ T_C=25ºC
P_tot
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
T_STG
Limit
-600
-560
-7
-150
-500
-50
2
+150
- 55 to +150
Unit
V
V
V
mA
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
I_C = -1mA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -10uA, I_C = 0
V_CB = -600V, I_E = 0
V_EB = -7V, I_C = 0
I_C = -20mA, I_B = -2mA
I_C = -50mA, I_B = -10mA
I_C = -50mA, I_B = -10mA
V_CE = -10V, I_C = -50mA
V_CE = -10V, I_C = -1mA
V_CE = -10V, I_C = -50mA
V_CE = -10V, I_C = -100mA
V_CE = -20V, I_E=-10mA
V_CB = -20V, f=1MHz
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(SAT) 1
V_CE(SAT) 2
V_BE(SAT) 1
V_BE(ON)
h_FE 1
h_FE 2
h_FE 3
f_T
Cob
Min
-600
-560
-7
--
--
--
--
--
--
150
80
--
50
--
Typ
--
--
--
--
--
--
--
--
--
--
--
15--
--
--
Max
--
--
--
-100
-100
-0.2
-0.5
-1.0
-1.0
--
300
--
--
8
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
1/4
Version: B11