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| TSA1036 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – General Purpose PNP Transistor | |||
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TSA1036
General Purpose PNP Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
-60V
-60V
-0.6A
-0.4V @ IC / IB = -150mA / -15mA
Features
Ordering Information
â Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA
â Complementary part with TSC2411
Structure
Part No.
TSA1036CX RF
Package
SOT-23
Packing
3Kpcs / 7â Reel
â Epitaxial Planar Type
â PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
Collector Current
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
IC
PD
RθJA
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pwâ¤350us, Dutyâ¤2%
TJ
TSTG
Limit
-60
-60
-5
-0.6
225
556
+150
- 55 to +150
Unit
V
V
V
A
mW
oC/W
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage IC = -10uA, IE = 0
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0
BVCBO
-60
BVCEO
-60
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = -10uA, IC = 0
VCB = -50V, IE = 0
BVEBO
-5
ICBO
--
Emitter Cutoff Current
VEB = -0.5V, IC = 0
IEBO
--
Collector-Emitter Saturation Voltage IC / IB = -150mA / -15mA
*VCE(SAT)
--
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
IC / IB = -500mA / -50mA
VCE = -10V, IC = -0.1A
VCE = -10V, IC = -150mA
*VBE(SAT)
--
*hFE 1
75
*hFE 2
100
Transition Frequency
VCE =-5V, IC=-50mA,
f=100MHz
fT
200
Output Capacitance
VCB = -10V, f=1MHz
* Pulse Test: Pulse Width â¤380uS, Duty Cycleâ¤2%
Cob
--
Typ
--
--
--
--
--
--
--
--
--
--
--
Max
--
--
--
-10
-50
-0.4
-1.3
--
300
--
8
Unit
V
V
V
nA
nA
V
V
MHz
pF
1/4
Version: A09
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