TS4448RZ_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 150mW High Speed SMD Switching Diode

CREAT BY ART
Small Signal Product
TS4448 RZ
Taiwan Semiconductor
150mW High Speed SMD Switching Diode
FEATURES
- Designed for mounting on small surface
- Extremely thin/leadless package
- High mounting capability, strong surage with stand,
high reliability
- Pb free and RoHS compliant
- Green Compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: 0603 standard package, molded plastic
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026 guaranteed
- High temperature soldering guaranteed: 260^oC/10s
- Polarity: Indicated by cathode band
- Weight : 0.003 grams (approximately)
0603
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean forward current
P_D
150
V_RRM
100
I_FRM
300
I_O
125
Non-repetitive peak forward surge current
Pulse Width = 1 µs
Pulse Width = 8.3 ms
I_FSM
2
1.0
Thermal resistance form junction to ambient
Junction and storage temperature range
(Note 1)
R_θJA
T_J, T_STG
666
- 40 to + 125
UNIT
mW
V
mA
mA
A
℃/W
o_C
PARAMETER
SYMBOL
Reverse breakdown voltage
(Note 2)
Forward voltage
Reverse leakage current
Junction capacitance
I_F=100mA
I_F=5mA
V_R=20V
V_R=80V
V_R=0.5V, f=1.0MHz
Reverse recovery time
(Note 3)
Note: 1 Valid provided that electrodes are kept at ambient temperature
Note: 2 Test Condition: I_R=100µA
Note: 3 Test Condition: I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
V_(BR)
V_F
I_R
C_J
t_rr
MIN
-
0.62
-
-
-
-
MAX
80
1
0.72
25
100
9
9
UNIT
V
V
nA
pF
ns
Document Number: DS_S1407008
Version: E14