TS4448RZ Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 150mW High Speed SMD Switching Diode

Small Signal Diode
TS4448 RZ
150mW High Speed SMD Switching Diode
0603
A
D
B
FeaturesBV
—Designed for mounting on small surface.
—Extremely thin/leadless package
—High mounting capability,strong surage with stand,
high reliability.
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case :0603 standard package, molded plastic
—Terminal: Gold plated, solderable
per MIL-STD-750, method 2026 guaranteed
—High temperature soldering guaranteed: 260 °C/10s
—Polarity : Indicated by cathode band
—Weight : 0.003 gram (approximately)
Ordering Information
C
E
Dimensions
A
B
C
D
E
Unit (mm)
Min Max
1.60 1.80
0.80 1.00
0.70 0.85
Typ. 0.45
Typ. 0.70
Unit (inch)
Min Max
0.063 0.071
0.031 0.039
0.027 0.033
Typ. 0.018
Typ. 0.028
Part No.
TS4448 RZ
Package
0603
Packing
4Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse Width= 1 μsec
Pulse Width= 8.3 msec
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
VRRM
IFRM
IO
IFSM
RθJA
TJ, TSTG
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
(Note 2)
IF=
5mA
IF=
100mA
VR=
20V
VR=
80V
VR=0.5, f=1.0MHz
(Note3)
Symbol
V(BR)
VF
IR
CJ
Trr
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IR=100μA
Notes:3. Test Condition : IF=IR=10mA, RL=100Ω, IRR=1mA
Value
150
100
300
125
2.0
1.0
666
-40 to + 125
Min
Max
-
80
0.72
0.62
1.00
-
25
-
100
-
9.0
-
9
Units
mW
V
mA
mA
A
°C/W
°C
Units
V
V
nA
pF
ns
Version : C09