TS4448RW_15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 350mW High Speed SMD Switching Diode

Small Signal Product
TS4448 RW
Taiwan Semiconductor
350mW High Speed SMD Switching Diode
FEATURES
- Designed for mounting on small surface
- Extremely thin / leadless package
- High mounting capability, strong surage with stand,
high reliability
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
1005
MECHANICAL DATA
- Case: 1005
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band
- Weight: 6 mg (approximately)
- Marking code: S5
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
200
Repetitive Peak Reverse Voltage
V_RRM
100
Mean Forward Current
I_O
125
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1 μs
Pulse Width = 8.3 ms
I_FSM
2
1
Thermal Resistance (Junction to Ambient)
(Note 1)
R_θJA
500
Junction and Storage Temperature Range
T_J , T_STG
-40 to +125
PARAMETER
Reverse Breakdown Voltage
(Note 2)
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I_F=5mA
I_F=100mA
V_R=20V
V_R=80V
V_R=0V, f=1.0MHz
(Note 3)
Note 1: Valid provided that electrodes are kept at ambient temperature
Note 2: Test condition : I_R=100μA
Note 3: Test condition : I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
SYMBOL
V_(BR)
V_F
I_R
C_J
t_rr
MIN
-
0.62
-
-
-
-
MAX
80
0.72
1.00
25
100
9
9
UNIT
mW
V
mA
A
o_C/W
o_C
UNIT
V
V
nA
pF
ns
Document Number: DS_S1501011
Version: D15