TS4448RW Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 350mW High Speed SMD Switching Diode

Small Signal Diode
TS4448 RW
350mW High Speed SMD Switching Diode
1005
A
D
Features
—Designed for mounting on small surface.
—Extremely thin/leadless package
—High mounting capability,strong surage with stand,
high reliability.
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case :1005 standard package, molded plastic
—Terminal: Gold plated, solderable
per MIL-STD-750, method 2026 guaranteed
—High temperature soldering guaranteed: 260 °C/10s
—Polarity : Indicated by cathode band
—Weight : 0.006 gram (approximately)
Ordering Information
B
C
E
Dimensions
A
B
C
D
E
Unit (mm)
Min Max
2.40 2.60
1.10 1.30
0.70 0.90
Typ. 0.50
Typ. 1.00
Unit (inch)
Min Max
0.095 0.102
0.043 0.051
0.027 0.035
Typ. 0.02
Typ. 0.04
Part No.
TS4448 RW
Package
1005
Packing
4Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse Width= 1 μsec
Pulse Width= 8.3 msec
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
VRRM
IO
IFSM
RθJA
TJ, TSTG
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
(Note 2)
IF=
5mA
IF=
100mA
VR=
20V
VR=
80V
VR=0, f=1.0MHz
(Note3)
Symbol
V(BR)
VF
IR
CJ
Trr
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IR=100μA
Notes:3. Test Condition : IF=IR=10mA, RL=100Ω, IRR=1mA
Value
200
100
125
2.0
1.0
500
-40 to + 125
Min
Max
-
80
0.72
0.62
1.00
-
25
-
100
-
9.0
-
9
Units
mW
V
mA
A
°C/W
°C
Units
V
V
nA
pF
ns
Version : C09